IRF3205PBF

Description
Advanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low  on-resistance per silicon area.
 This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts.
The low thermal resistance andlow package cost of the TO-220 contribute to its wideacceptance throughout the industry.

■Advanced Process Technology
■Ultra Low On-Resistance
■Dynamic dv/dt Rating
■175°C Operating Temperature
■Fast Switching
■Fully Avalanche Rated
■Lead-Free

Documents:
datasheet