IRF3205Z TO-220(原裝)

HEXFET® Power MOSFET

Features

■ Advanced Process Technology
■ Ultra Low On-Resistance
■ 175°C Operating Temperature
■ Fast Switching
■ Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance
per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.

Documents:
datasheet