RoHs |
|
Vds - 漏-源擊穿電壓 |
40V |
Id - C連續漏極電流 |
68 A |
Rds On - 漏-源電阻 |
7.5 mOhms |
Vgs - 閘極-源極電壓 |
- 20 V, + 20 V |
Vgs th - 門源門限電壓 |
1.4 V |
Qg - 閘極充電 |
24 C |
工作溫度 |
-55 ~ 175°C |
Pd - 功率消耗 |
61 W |
Features
(1) High-speed switching
(2) Small gate charge: QSW = 6.0 nC (typ.)
(3) Small output charge: Qoss = 16 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 5.6 m Ω (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, I D = 0.2 mA)
Datasheet